Fabrication of atomic-scale dopant-in-silicon quantum processors

Fabrication of atomic-scale dopant-in-silicon for silicon quantum processors
Abstract:
Atomic-scale devices made from individual dopant atoms in silicon offer new ways to investigate physical phenomena and develop novel technologies.
At Asentas Quantum Systems (AQS), we are developing a solid-state quantum processor architecture in which the valence electron of a single dopant atom serves as a spin qubit and the nuclear spin of the same atom is used as a quantum memory. I will introduce this architecture and describe the fabrication technology that underpins it.
Our approach uses scanning tunneling microscopy hydrogen resist lithography (STM-HRL) to place individual dopant atoms deterministically with atomic-scale precision. Although STM-HRL is an established technique, the limited yield of single-atom fabrication has until recently been a major barrier scaling to large numbers of devices. I will show how we have overcome this limitation, achieving a single-atom yield approaching 100% for arsenic in silicon, providing a fabrication pathway to qubit scaling .
I will outline the full device fabrication process and present preliminary electrical measurements from arsenic-in-silicon devices fabricated using hydrogen resist lithography.
Finally, I will set out AQS’s vision for building a fault-tolerant quantum computer.
Read More:
(https://advanced.onlinelibrary.wiley.com/doi/full/10.1002/adma.202312282)
(https://pubs.acs.org/ancac3/article/14/3/3316/1389671/Atomic-Scale-Patterning-of-Arsenic-in-Silicon-by)
AGENDA:
Thursday November 12, 2026
11:30 AM: Networking, Pizza & Drinks
Noon — 1 pm: Seminar
Please register on Eventbrite before 9:30 AM on Thursday November 12, 2026
$4 IEEE members $6 non IEEE members
(discounts for unemployed and students )
Bldg: ==> Use corner entrance: Kifer Road / San Lucar Court ==> Do not enter at main entrance on Kifer Road, EAG Labs, 810 Kifer Road, Sunnyvale, California, California, United States, 95051